Events

Sep. 24, 2024 Taiyo Nippon Sanso will be sponsoring (at Gold Level), exhibiting and holding presentations at the International Workshop on Nitride Semiconductors (IWN 2024), on the island of O'ahu, Hawai'i, USA from November 3 (Sun) to 8 (Fri), 2024.
Oral Presentation
  • Booth No.: Not Fixed
  • Topic-1: Demonstration of MOCVD System with Advanced Mass Production Performance
  • Topic-2: Demonstration of AlScN Growth Using Commercial-Grade MOCVD Equipment Compatible with Low Vapor Pressure Precursor Supply
Mar. 11, 2024 Taiyo Nippon Sanso will be sponsoring (Platinum Level), exhibiting and holding presentations at the International Workshop on Gallium Oxide and Related Materials (IWGO), in Berlin, Germany from May 26 (Sun) to 31 (Fri), 2024.
Oral Presentation
  • Booth No.: Not Fixed
  • Topic: Growth of Si-doped β-Ga2O3 thick layers by low-pressure hot-wall MOVPE using tetramethylsilane as a doping gas
  • Date & Time: Not fixed
Mar. 4, 2024 Taiyo Nippon Sanso will be sponsoring the 7th U.S. Gallium Oxide Workshop (GOX 2024), to be held in Columbus, Ohio, USA from August 5 (Mon) to 7 (Wed), 2024.
Mar. 4, 2024 Taiyo Nippon Sanso will be sponsoring, exhibiting and holding presentations at the 21st International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXI), in Las Vegas, Nevada, USA from May 12 (Sun) to 17 (Fri), 2024.
Dec. 7, 2023 Taiyo Nippon Sanso will be giving a presentation at the SPIE Photonics West, to be held in San Francisco, California, USA from January 27 (Sat) to February 1 (Thu), 2024.
Oral Presentation
  • Topic: Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD (Invited Paper)
  • Date & Time: Feb. 1 (Thu) 11:30AM-12:00PM PST
Nov. 9, 2023 Taiyo Nippon Sanso will be presenting a poster at and sponsoring the 14th International Conference on Nitride Semiconductors (ICNS-14), to be held in Fukuoka, Japan from November 12 (Sun) to 17 (Fri), 2023.
Poster Presentation
  • Topic: Development of a MOCVD system with an integrated cleaning system and improved efficiency for the mass production of GaN epi-wafers
  • Date & Time: Nov. 16 (Thu) 16:20-18:10 JST
Jul. 14, 2023 Taiyo Nippon Sanso will be proud to be a bronze sponsor for the 6th U.S. Workshop on Gallium Oxide (GOX 2023), to be held in Buffalo, New York, USA from Aug 13 (Sun) to 16 (Wed), 2023.
Jun. 8, 2023 Taiyo Nippon Sanso will be sponsoring the 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23) and the 21st US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-21), to be held in Tucson, Arizona, USA from Aug 13 (Sun) to 18 (Fri), 2023.
Apr. 17, 2023 Taiyo Nippon Sanso will be sponsoring and conducting a presentation at the 6th International Workshop on Ultraviolet Materials and Devices (IWUMD 2023), to be held in Metz, France from June 5 (Mon) to 8 (Thu), 2023.
Feb. 16, 2023 Taiyo Nippon Sanso will be exhibiting at the International Conference on Compound Semiconductor Manufacturing Technology (2023 CS MANTECH), to be held in Orlando, USA from May 15 (Mon) to 18 (Thu), 2023.
Feb. 16, 2023 Taiyo Nippon Sanso will be sponsoring and conducting a presentation at the 15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2023), to be held in Gifu, Japan from March 5 (Sun) to 9 (Thu), 2023.
Oral Presentation
  • Topic: Epitaxial growth for AlGaN-based deep-ultraviolet light-emitting diodes on 6-inch sputter-annealed AlN template by using a mass production MOCVD system
  • Date & Time: Mar. 8 (Wed) 10:45-11:00 JST
Jan. 26, 2023 Taiyo Nippon Sanso will be sponsoring the Ohio State Materials & Manufacturing Conference 2023, to be held in Ohio, USA from May 9 (Tue) to May 11 (Thu), 2023.
Sep. 1, 2022 Taiyo Nippon Sanso will be sponsoring and exhibiting at the International Workshop on Nitride Semiconductors (IWN2022) in Berlin, Germany from October 9 (Sun) to 14 (Fri), 2022.
Sep. 1, 2022 Taiyo Nippon Sanso will be sponsoring and exhibiting at the International Workshop on Gallium Oxide and Related Materials (IWGO2022) in Nagano, Japan from October 23 (Sun) to 27 (Thu), 2022.
Aug. 26, 2022 Taiyo Nippon Sanso will be sponsoring the 9th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2022) from November 7 (Mon) to 9 (Wed), 2022.
Jul. 27, 2022 Taiyo Nippon Sanso will be sponsoring the 5th U.S. Gallium Oxide Workshop (GOX 2022) in Washington, D.C., USA from August 7 (Sun) to 10 (Wed), 2022.
Apr. 12, 2022 Taiyo Nippon Sanso and Notre Dame University, USA, will give a presentation on Vertical GaN PN Diodes at the 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA). The VLSI-TSA will be held in hybrid form, from April 18 (Mon) to April 21 (Thu), 2022 at the Ambassador Hotel Hsinchu, Taiwan, and from April 25 (Mon) to May 24 (Tue), 2022 as a virtual symposium.
Mar. 25, 2022 Taiyo Nippon Sanso will be sponsoring the MRS Webinar on Ultrawide Bandgap Materials and Devices, to be held online on March 31 (Thu), 2022.
Sep. 29, 2021 Taiyo Nippon Sanso is sponsoring the Nitride Materials-Synthesis, Characterization and Modeling Symposium (EQ13) at the 2021 Fall MRS Meeting and Exhibit, to be held in Boston, USA from November 29 (Mon) to December 2 (Thu), 2021 and to be held online from December 6 (Mon) to 8 (Wed), 2021.
Aug. 31, 2021 Taiyo Nippon Sanso will give a presentation on the subject of “Preliminary growth and uniformity of high Al composition AlGaN-based DUV-LEDs targeting wavelengths around 230nm” at the 40th Electronic Materials Symposium, to be held online from October 11 (Mon) to 13 (Wed), 2021.
Aug. 24, 2021 Taiyo Nippon Sanso is sponsoring the Gallium Nitride and Silicon Carbide Power Technology Symposium (H03) at the 240th Electrochemical Society (ECS) Meeting, to be held online from October 10 (Sun) to 14 (Thu), 2021.
May 18, 2021 Taiyo Nippon Sanso will be exhibiting at the ARPA-E Energy Innovation Summit held online from May 24 (Mon) to 27 (Thu), 2021.
May 18, 2021 Taiyo Nippon Sanso will be exhibiting at the 63rd Electronic Materials Conference (EMC 2021) held online from June 23 (Wed) to 25 (Fri), 2021.
Apr. 15, 2021 Taiyo Nippon Sanso will be exhibiting at the International Conference on UV LED Technologies and Applications (ICULTA 2021) on April 19 (Mon) and 20 (Tue), 2021.
Apr. 15, 2021 Taiyo Nippon Sanso will be lending support as well as exhibiting during Compound Semiconductor Week (CSW-2021) held online from May 9 (Sun) to 13 (Thu), 2021.
Mar. 10, 2021 Taiyo Nippon Sanso is sponsoring the 2021 MRS Spring Meeting - Symposium EL04 - Ultrawide Bandgap Materials, Devices and Systems from April 17 (Sat) to 23 (Fri), 2021.
Oct. 12, 2020 Taiyo Nippon Sanso is sponsoring webinars on Material Research Society (MRS) Global Diversity Awareness Month in October 2020.
Webinars
Aug. 31, 2020 Taiyo Nippon Sanso is sponsoring a webinar in the Materials Research Society (MRS) professional development webinar series on September 9 (Wed), 2020.
Jun. 3, 2020 Taiyo Nippon Sanso is sponsoring the 78th Device Research Conference from June 21 (Sun) to 24 (Wed), 2020.
Jun. 3, 2020 Taiyo Nippon Sanso is sponsoring the 62nd Electronic Materials Conference from June 24 (Wed) to 26 (Fri), 2020.
Jun. 3, 2020 Taiyo Nippon Sanso is sponsoring the 8th IEEE Workshop on Wide Bandgap Power Devices and Applications 2020 from October 25 (Sun) to 27 (Tue), 2020 at Crown Plaza Redondo Beach and Marina, Redondo Beach, CA, USA.
Apr. 20, 2020 Taiyo Nippon Sanso is sponsoring and presenting at AngelTech Online Summit on May 19th, which is bringing together the global Compound Semiconductor Industry to learn, network, interact and create new business opportunities - digitally. There is no cost to register.
Oral Presentation
  • Session: CS International
  • Topic: GaN MOCVD Solutions
  • Date: May 19 (Tue)
  • Abstract:
    5G wireless communications, electric vehicles, and advanced automotive lighting applications offer many opportunities for compound semiconductor devices. Whether the application requires power diodes, high frequency transistors, or laser chips, high quality and high throughput MOCVD processes are essential. Taiyo Nippon Sanso Corporation (TNSC) was the first to develop MOCVD equipment in 1983 and has developed many innovations that allow for fast growth of thick, high quality (Al,In)GaN films, which in turn enable high throughput cost effective MOCVD processes. This presentation will highlight key advantages of TNSC’s MOCVD equipment and TNSC’s full-end to end solution for compound semiconductor manufacturers.
Aug. 9, 2019 The National Institute of Advanced Industrial Science and Technology (AIST) is planning a presentation (co-authored with Taiyo Nippon Sanso) and Taiyo Nippon Sanso will have an exhibit booth at the 51st International Conference on Solid State Device and Materials (SSDM) from September 2 (Mon) to 5 (Thu), 2019 at Nagoya University, Nagoya, Aichi, Japan.
Oral Presentation
  • Session: C-5-1 (Area: 06: Photovoltaic/Energy Harvesting/Battery-related Technology)
  • Topic: Recent progress on HVPE-grown III-V solar cells with extremely high growth rates
  • Date: Sep. 5 (Thu)
Aug. 9, 2019 Taiyo Nippon Sanso is planning a presentation during the poster session at the 4th International Workshop on Ultraviolet Materials and Devices (IWUMD-IV) from September 8 (Sun) to 13 (Fri), 2019 at Hotel Holiday Inn St Petersburg, Saint Petersburg, Russia.
Poster Presentation
  • Session: We-13p
  • Topic: Performance Improvement of Deep Ultraviolet Light Emitting Diode by Optimization of Electron Block Layer Thickness and Mg Concentration in p-GaN Contact Layer
  • Date & Time: Sep. 11 (Wed) 18:00-19:30
Aug. 9, 2019 Taiyo Nippon Sanso is planning a presentation during the poster session at the 80th JSAP Autumn Meeting 2019 from September 18 (Wed) to 21 (Sat), 2019 at Sapporo Campus, Hokkaido University, Sapporo, Hokkaido, Japan.
Apr. 5, 2019 Taiyo Nippon Sanso is planning to have an exhibit booth at 2019 International Conference on Compound Semiconductor Manufacturing Technology (CS-MANTECH 2019) from April 29 (Mon) to May 2 (Thu), 2019 at Hyatt Regency Minneapolis, Minneapolis, MN, USA.
Apr. 5, 2019 Taiyo Nippon Sanso is planning to have an exhibit booth at Compound Semiconductor Week 2019 (CSW2019) from May 19 (Sun) to 23 (Thu), 2019 at Nara Kasugano International Forum, Nara, Japan.
Oct. 3, 2018 Taiyo Nippon Sanso is planning a presentation during the poster session at IWN 2018 from November 11 (Sun) to 16 (Fri), 2018 at ANA Crown Plaza Kanazawa, Japan.
Poster Presentation
  • Session: Poster Session 3
  • Topic: High Temperature Annealing of AlN on 6-inch Sapphire by Annealing Furnace Capable of Processing Multiple Substrates
  • Date: Nov. 15 (Thu)
Aug. 1, 2018 Taiyo Nippon Sanso is planning six presentations at the 79th JSAP Autumn Meeting 2018 from September 18 (Tue) to 21 (Fri), 2018 at the Nagoya Congress Center in Nagoya, Japan.
Oral Presentation
  • Session: 15.4 III-V-group nitride crystals
  • Topic: [21p-146-3] High temperature growth of N-polar GaN by THVPE
  • Date & Time: Sept. 21 (Fri) 14:00-14:15
  • Presentation Room: 146 (Reception Hall)
  • Session: 13.9 Compound solar cells
  • Topic: [20p-136-8] Evaluation on hetero-interfaces properties in GaAs solar cells grown by HVPE
  • Date & Time: Sept. 20 (Thu) 15:15-15:30
  • Presentation Room: 136 (3F_Lobby)
  • Session: 13.9 Compound solar cells
  • Topic: [20p-136-5] High speed growth of InGaP solar cells fabricated by hydride vapor phase epitaxy
  • Date & Time: Sept. 20 (Thu) 14:30-14:45
  • Presentation Room: 136 (3F_Lobby)
  • Session: 15.4 III-V-group nitride crystals
  • Topic: [19a-146-10] Analysis of efficiency curves of green emitting InGaN-based multiple quantum wells using rate equation for radiative and nonradiative recombination of excitons
  • Date & Time: Sept. 19 (Wed) 11:30-11:45
  • Presentation Room: 146 (Reception Hall)
  • Session: 13.7 Compound and power electron devices and process technology
  • Topic: [20a-331-8] Distribution of Net Donor Concentration in Low-doped N-type GaN Grown on 4-inch Sapphire substrates by Multi-wafer MOVPE Reactor
  • Date & Time: Sept. 20 (Thu) 11:00-11:15
  • Presentation Room: 331 (International Conference Room)
  • Session: 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy
  • Topic: [18p-234B-1] Low temperature photoluminescence of GaAs grown at extremely high rate
  • Date & Time: Sept. 18 (Tue) 13:15-13:30
  • Presentation Room: 234B (234-2)
Apr. 11, 2018 Taiyo Nippon Sanso is planning a presentation at the Compound Semiconductor Week (CSW 2018) from May 29 (Tue) to June 1 (Fri) at Massachusetts Institute of Technology, Cambridge, MA, USA.
Oral Presentation
  • Session: We1B1 Wide Band Gap (AlGaN)
  • Topic: High Quality, Large Diameter AlN-on-sapphire Templates by High Temperature N2 Annealing
  • Date & Time: May 30 (Wed) 8:45-9:00
Apr. 11, 2018 Research Center for Advanced Science and Technology, The University of Tokyo is planning a presentation (co-authored with Taiyo Nippon Sanso) at 19th International Conference on Metalorganic Chemical Vapor Phase Epitaxy (ICMOVPE-XIX) from June 3 (Sun) to 8 (Fri) at Nara Kasugano International Forum, Nara Japan. Taiyo Nippon Sanso is also planning multiple presentations.
Oral Presentation: Research Center for Advanced Science and Technology, The University of Tokyo
  • Session: 7B-3.2
  • Topic: Study on the quality of GaAs grown by ultrafast MOVPE
  • Date & Time: June 7 (Thu) 11:30-11:45
  • Presentation Room: Room 3&4
Oral Presentation: TNSC
  • Session: 5E-3.1 (by invitation)
  • Topic: Design evolution of MOVPE reactors for improved productivity: adaptation to nitrides and feedback to classical III-V
  • Date & Time: June 5 (Tue) 19:00-19:30
  • Presentation Room: Room 3&4
Poster Presentation: TNSC
  • Session: P1-20
  • Topic: Investigation of Large-diameter AlN Template with High Quality by High Temperature N2 annealing
  • Date & Time: June 5 (Tue) 16:00-17:30
  • Presentation Room: Reception Hall
  • Session: P1-24
  • Topic: Influence of MOCVD reactor environment on crystal quality of AlN nucleation layer in AlGaN/GaN high-electron-mobility transistor structure on Si substrate
  • Date & Time: June 5 (Tue) 16:00-17:30
  • Presentation Room: Reception Hall
  • Session: P1-25
  • Topic: Si-doped GaN Growth as a Drift Layer of Vertical Power Devices by Using Production-Scale Metalorganic Chemical Vapor Deposition
  • Date & Time: June 5 (Tue) 16:00-17:30
  • Presentation Room: Reception Hall
  • Session: P1-62
  • Topic: High throughput MOVPE and accelerated growth rate of GaAs for PV application
  • Date & Time: June 5 (Tue) 16:00-17:30
  • Presentation Room: Reception Hall
Feb. 2, 2018 Taiyo Nippon Sanso is planning a presentation at the 65th JSAP Spring Meeting 2018 (JSAP Spring 2018) from March 8 (Sun) to 21 (Wed), 2018 at Waseda University, Nishiwaseda Campus, Japan.
Dec. 1, 2017 Taiyo Nippon Sanso is planning a presentation at SPIE Photonics West 2018 from January 27 (Sun) to February 1 (Thu), 2018 at the Moscone Center, San Francisco, CA, USA.
Oral Presentation
  • Session: Growth I/10532-3
  • Topic: Characteristics of AlN layer on four-inch sapphire substrate by high-temperature annealing in nitrogen atmosphere
  • Date & Time: Jan. 29 (Mon), 2018 11:10AM-11:30AM
Oct. 2, 2017 The National Institute of Advanced Industrial Science and Technology (AIST) is planning a presentation (co-authored with Taiyo Nippon Sanso) at the 27th International Photovoltaic Science and Engineering Conference (PVSEC 2017) from November 12 (Sun) to 17 (Fri), 2017 at Lake Biwa Otsu Prince Hotel, Otsu, Shiga, Japan.
Oral Presentation
  • Session: 3Tu5.4
  • Topic: Fabrication of GaAs solar cells grown with InGaP window layers by Hydride Vapor Phase Epitaxy
  • Date & Time: Nov. 14 (Tue), 2017 2:30PM-2:45PM
  • Place: Room 3
Oct. 2, 2017 Taiyo Nippon Sanso is planning a presentation and will also have an exhibit booth at the International Workshop on UV Materials and Devices 2017 (IWUMD 2017) from November 14 (Tue) to 18 (Sun), 2017 at Kyushu University, Fukuoka, Japan.
Poster Presentation
  • Session: Th-P42
  • Topic: Luminescence characteristics of Si-doped high Al composition AlGaN Multi-quantum-well grown by metal organic chemical vaper deposition
  • Date & Time: Nov. 15 (Thu), 2017 12:45PM-2:45PM

Tokyo University of Agriculture and Technology is also planning a presentation (co-Authored with Taiyo Nippon Sanso).

Poster Presentation
  • Session: We-P51
  • Topic: High temperature growth of GaN by THVPE method
  • Date & Time: Nov. 15 (Wed), 2017 12:30PM-2:30PM
Sep. 1, 2017 Taiyo Nippon Sanso is planning a presentation at the 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017) from October 8 (Sun) to 12 (Thu), 2017 at the Banff Centre, Banff, Alberta, Canada.
Poster Presentation
  • Session: TP24
  • Topic: Characterization of AlN Layer on 4 Inch Sapphire Substrate by High Temperature Annealing in Nitrogen Atmosphere
  • Date & Time: Oct. 10 (Tue), 2017 4:00PM-6:00PM
Aug. 4, 2017 Taiyo Nippon Sanso is planning a presentation at the 78th JSAP Autumn Meeting 2017 (JSAP Autumn 2017) from September 5 (Tue) to 8 (Fri), 2017 at Fukuoka International Congress Center, Fukuoka, Japan.
Aug. 4, 2017 Taiyo Nippon Sanso is planning a presentation at the 10th International Workshop on Bulk Nitride Semiconductors (IWBNS-X) from September 18 (Mon) to 22 (Fri), 2017 at Hotel Nuuksio, Espoo, Finland.
Jun. 6, 2017 Taiyo Nippon Sanso is planning a presentation and will also have an exhibit booth at the 12th International Conference on Nitride Semiconductors (ICNS-12) from July 24 (Mon) to 28 (Fri), 2017 at Strasbourg Convention Center, Strasbourg, France.
Presentation Topic
  • Characteristics of AlN layer on 4-inch sapphire substrate by high temperature annealing in nitrogen atmosphere
Jun. 6, 2017 Taiyo Nippon Sanso is planning a presentation and will also have an exhibit booth with Matheson TRI-Gas at the 18th US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-18) from July 30 (Sun) to August 4 (Fri), 2017 at Eldorado Hotel and Spa, Santa Fe, NM, USA.
Presentation Topic
  • Properties of GaN on high quality AlN sapphire template by using metalorganic chemical vapor deposition
Jun. 6, 2017 The National Institute of Advanced Industrial Science and Technology (AIST) and Taiyo Nippon Sanso are planning two presentations at the 44th Photovoltaic Specialists Conference (PVSC 2017) from June 25 (Sun) to 30 (Fri), 2017 at the Washington Marriott Wardman Park, Washington D.C., USA.
Presentation Topic
  • Characterization of GaAs solar cells grown by hydride vapor phase epitaxy in a horizontal reactor
  • Extremely high-speed GaAs growth by MOVPE for low cost PV application
Apr. 3, 2017 Taiyo Nippon Sanso is planning a presentation at Compound Semiconductor Week 2017 (CSW 2017) from May 14 (Sun) to 18 (Thu), 2017 at “dbb forum berlin” in Berlin, Germany.
Mar. 16, 2017 Taiyo Nippon Sanso is planning a presentation at the 5th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA '17) from April 19 (Wed) to 21 (Fri), 2017 at Pacifico Yokohama, Yokohama, Japan.
Mar. 16, 2017 Taiyo Nippon Sanso is planning a presentation at the 64th JSAP Spring Meeting 2017 (JSAP Spring 2017) from March 14 (Tue) to 17 (Fri), 2017 at Pacifico Yokohama, Yokohama, Japan.
Sep. 5, 2016 Taiyo Nippon Sanso plans to have a booth (Booth #2) at the 25th International Semiconductor Laser Conference (ISLC2016) from September 12 (Mon) to 15 (Thu), 2016 at the Kobe Meriken Park Oriental Hotelin in Kobe, Japan.
Sep. 5, 2016 Taiyo Nippon Sanso is planning three presentation during the poster session at the 77th JSAP Autumn Meeting 2016 from September 13 (Tue) to 16 (Fri), 2016 at the Toki Messe in Nigata, Japan.
Poster Presentation
  • Session: 14a-P6-15
  • Topic: The influence of number of strained-layer super-lattice (SLS) periods in vertical direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor on Si substrates
  • Date & Time: Sep. 14 (Wed), 2016 9:30AM-11:30AM
  • Session: 16a-P5-18
  • Topic: Regrowth of AlGaN (Al > 0.5) and AlN on AlN Template Processed by High temperature Annealing at Nitrogen Atmosphere
  • Date & Time: Sep. 16 (Fri), 2016 9:30AM-11:30AM
  • Session: 16a-P5-19
  • Topic: Control of C and Si Doping in Low Si-doped GaN Using Multiwafer MOCVD Tool
  • Date & Time: Sep. 16 (Fri), 2016 9:30AM-11:30AM
Sep. 5, 2016 Taiyo Nippon Sanso is planning two presentations at the European Materials Reserch Society (E-MRS) 2016 Fall Meeting from September 19 (Mon) to 22 (Thu), 2016 at the Warsaw University of Technology in Warsaw, Porland.
Oral Presentation
  • Session: G.2.1
  • Topic: Challenges to GaN MOCVD: High Growth rate and High Purity
  • Date & Time: Sep 19 (Mon), 2016 11:00AM
Poster Presentation
  • Session: F.P.1.13
  • Topic: Characterization of AlN and AlxGa1-xN (x > 0.5) films regrown by high-temperature MOCVD on N2-annealed AlN template
  • Date & Time: Sep 19 (Mon), 2016 5:45PM
Sep. 5, 2016 Taiyo Nippon Sanso is planning to give two presentations during the poster session at the International Workshop on Nitride Semiconductors (IWN) 2016 and Matheson TRI-Gas/Taiyo Nippon Sanso will also have an exhibit booth from October 2 (Sun) to 6 (Thu), 2016 at the Hilton Orlando Lake Buena Vista in Orlando, Florida USA.
Also, Sandia National Laboratories will give an oral presentation about a paper called "Low Etch Pit Density AlN on Sapphire" that it co-authored with Taiyo Nippon Sanso.
TNSC Poster Presentation
  • Session: PS1.27 at Grand Ballroom
  • Topic: Regrowth of High‐Al‐Content AlGaN and AlN on High‐Quality AlN Template Fabricated by Annealing at 1700C under Nitrogen Ambient
  • Date & Time: Oct. 3 (Mon), 2016 6:30PM-8:30PM
  • Session: PS2.122 at Grand Ballroom
  • Topic: Impact of Crystal Quality of AlN Nucleation Layer on the Vertical Direction Breakdown Voltage of AlGaN/GaN High-Electron-Mobility Transistor Structures on Si
  • Date & Time: Oct. 6 (Thu), 2016 9:45AM-10:45AM
Sandia National Laboratories Oral Presentation
  • Session: A2.7.05 Epitaxial Growth VII: Epitaxial Growth of (Al,Ga)N at International South
  • Topic: Low Etch Pit Density AlN on Sapphire
  • Date & Time: Oct. 6 (Thu), 2016 9:15AM
Jun. 17, 2016 Taiyo Nippon Sanso is planning to give a presentation at the International Workshop on UV Materials and Devices (IWUMD-2016) which will be held in the School of Physics, Peking University.
May 18, 2016 Taiyo Nippon Sanso is planning to give a presentation during the poster session at the 18th International Conference on Metal Organic Vapor Phase Epitaxy and will also have an exhibit (Booth #18) from July 10 to 15 at the Sheraton San Diego Hotel & Marina. Also, Sandia National Laboratories will give an oral presentation about a paper called "Growth Evolution of AlN on Sapphire at High Temperature" that it co-authored with Taiyo Nippon Sanso.
TNSC Poster presentation
  • Session: PS-1
  • Topic: Characterization of AlN and Mg-Doped AlxGa1-xN (x>0.2) Grown by Using Horizontal High-Flow-Rate MOVPE System
  • Date & Time: Jul. 12, 4:00PM-6:00PM
Sandia National Laboratories Oral presentation
  • Session: 1D-1 AlN Heteroepitaxy at Grande Ballroom C
  • Topic: Growth Evolution of AlN on Sapphire at High Temperature
  • Date & Time: Jul. 11, 4:00PM
May 18, 2016 Taiyo Nippon Sanso is planning two presentations during the poster session at the 2016 Compound Semiconductor Week (CSW2016) and will also have an exhibit (Booth #6) from June 26 to 30 at the Toyama International Conference Center, Toyama, Japan.
Feb. 22, 2016 Taiyo Nippon Sanso is planning a presentation during the ISPlasma symposium from March 6 to 10, 2016 at Nagoya University.
The topic will be “Breakdown electric field of each layer in AlGaN/GaN high-electron-mobility transistors on Si substrates.”
Feb. 22, 2016 Taiyo Nippon Sanso is planning a presentation during the 63rd JSAP Spring Meeting, 2016 from March 19 to 22 at the Tokyo Institute of Technology.
The topic will be “Relationship between Al compositions of AlGaN buffer layer and vertical leakage current of AlGaN/GaN HEMT on Si substrate.”
Feb. 22, 2016 Taiyo Nippon Sanso is planning a presentation during the poster session at the 2016 MRS Spring Meeting & Exhibit from March 28 to April 1 at the Phoenix Convention Center.
The topic will be “Variation of Vertical Direction Breakdown Voltage of the AlGaN/GaN HEMTs on AlN/Si Template Substrate as a Function of the Growth Temperature of the Initial Al Layer.”
Oct. 6, 2015 Taiyo Nippon Sanso is planning a presentation during the oral session at The 9th International Workshop on Bulk Nitride Semiconductors from November 2 to 6, 2015 at Oak Valley in Wonju, South Korea.
Topic will be "Low C and Si residual concentration of GaN grown on GaN Substrates by MOCVD"
Oct. 6, 2015 Taiyo Nippon Sanso is planning a presentation at The 6th International Symposium on Growth of Ⅲ-Nitrides from November 8 to 13, 2015 at Act City Hamamatsu in Hamamatsu, Japan.
Topic of the poster session will be "Si-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-speed-flow MOVPE reactor"
Topic of the keynote lecture will be "Opportunities and Challenges to GaN MOCVD for Electron Devices"
Oct. 6, 2015 Taiyo Nippon Sanso is planning a presentation during the oral cession IEICE Technical Committee from November 26 to 27, 2015 at Osaka City University Media center in Osaka, Japan.
Topic will be "Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate"
Sep. 1, 2015 Taiyo Nippon Sanso is planning a presentation during the poster session at the 76th JSAP Autumn Meeting 2015 from September 13 to 16, 2015 at Nagoya Congress Center in Nagoya, Japan.
The topics will be "Growth of n-type AlGaN (Al>0.5) at high rate using high-speed-flow MOCVD" and "Relationship between AlN layer and vertical breakdown voltage of AlGaN/GaN HEMT on Si substrate".
Aug. 4, 2015 Taiyo Nippon Sanso plans to have a booth at the 11th International Conference on Nitride Semiconductors (ICNS-11) from August 30 to September 4, 2015 at the Beijing International Convention Center in Beijing, China.
Aug. 4, 2015 Taiyo Nippon Sanso plans to have a booth at the 11th Topical Workshop on Heterostructure Microelectronics (TWHM) from August 23 to 26, 2015 at Hida Hotel Plaza in Takayama, Japan.
It is also planning to participate in the poster session on the topic of "Correlation of initial AlN layer and vertical direction current leakage of AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si substances".
Aug. 4, 2015 Taiyo Nippon Sanso plans to have a booth at the Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors (WUPP) from August 20 to 21, 2015 at Hilton Fukuoka Sea Hawk in Fukuoka, Japan.new window open
Feb. 26, 2015

Taiyo Nippon Sanso plans to have a booth at LED Taiwan 2015 from March 25 to 28, 2015 at the TWTC Nangang Exhibit Hall in Taipei, Taiwan.
Jul. 2, 2014

Taiyo Nippon Sanso plans to have a booth at IWN 2014 (International Workshop on Nitride Semiconductors 2014) from August 24 to 29, 2014 at the Centennial Hall in Wroclaw, Poland.
Jul. 2, 2014

Taiyo Nippon Sanso plans to have a booth at SSDM2014 (Solid State Devices and Materials 2014) from September 8 to 11, 2014 at the Tsukuba International Congress Center.
Apr. 18, 2014

Taiyo Nippon Sanso will be holding a booth at the 5th International Symposium on Growth of Ⅲ-Nitrides (ISGN-5) at the Westin Hotel, Peachtree Plaza (Atlanta, Georgia) from May 18 to 22, 2014.
Mar. 18, 2014

Taiyo Nippon Sanso will have a booth at "LED Taiwan 2014," to be held at TWTC Nangang Exhibit Hall, Taiwan from March 20 to 23, 2014.
Aug. 1, 2013

Taiyo Nippon Sanso is planning both a booth and a presentation on the epi-results of its MOCVD systems during the poster session at ICNS-10 (10th International Conference on Nitride Semiconductors) from August 25 to 30, 2013 at Gaylord National Hotel and Convention Center, Washington.
TNSC poster session presentation: August 28, 2013

Aug. 1, 2013

Taiyo Nippon Sanso plans to have a booth at TWHM 2013 (10th Topical Workshop on Heterostructure Microelectronics) from September 2 to 5, 2013 at Hakodate Kokusai Hotel.
Aug. 1, 2013

Taiyo Nippon Sanso plans to have a booth at SEMICON Taiwan 2013 from September 4 to 6, 2013 at TWTC Nangang Exhibition Hall, Taiwan.