Lit Thinking Selects Taiyo Nippon Sanso MOCVD Platform to Enable New UVLED Technologies and Commercial Products

Innovation Unit, CSE Department will move from Shiba Office to Minatomirai Office. Business will resume on May 1.

Production Efficiency Improved by 2X Compared to Conventional Systems, Announcement of the Release of the UR26K-CCD for Mass Production GaN MOCVD Systems

Taiyo Nippon Sanso sponsored, and also exhibited at, IWN 2022 in Berlin, Germany from October 9 (Sun) to 14 (Fri), 2022 and IWGO 2022 in Nagano prefecture from October 23 (Sun) to 27 (Thu). (English translation of TNSC house journal, January 2023)

Taiyo Nippon Sanso conducted a presentation at the 41st Electronic Materials Symposium (EMS-41), held in Nara, Japan from October 19 (Wed) to 21 (Fri), 2022.

Topic: In-plane uniformity control of Al composition and thickness for AlGaN-based Far-UVC LEDs growth

Taiyo Nippon Sanso is becoming a Gold Sponsor for the Harold M. Manasevit Young Investigator Award, which recognises seminal contributions in MOCVD technology and research.

We have begun epitaxy using the newly-developed FR2000-OX Ga₂O₃ MOCVD system.

Taiyo Nippon Sanso Ga₂O₃ MOCVD System Installed and Qualified for Operation at Tokyo University of Agriculture and Technology

Taiyo Nippon Sanso and RIKEN demonstrate MOCVD AlGaN-based deep ultraviolet LED EL emission at 226nm

Taiyo Nippon Sanso and North Carolina State University Agree to Three-Year Collaboration to Enable New GaN Optoelectronic Technologies and Commercial Opportunities

Sandia National Laboratories Selects Second Taiyo Nippon Sanso SR4000HT MOCVD Platform for Ultra-Wide Bandgap Research and Development

Successful metalorganic vapor phase epitaxy of β-gallium oxide crystals
— Accelerating the realization of a carbon-free society through next-generation power devices —

Taiyo Nippon Sanso conducted a presentation at 13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2021), held online from March 7 (Sun) to 11 (Thu), 2021.

Topic: Optimization of p-type Layer for Improvement of Deep Ultraviolet LEDs on 4-inch Substrates Grown by Using a Large-Scale MOCVD Tool

Taiyo Nippon Sanso MOCVD equipment division receiving the Industry Award from The Japan Society of Vacuum and Surface Science

Taiyo Nippon Sanso conducted a presentation at the 39th Electronic Materials Symposium (EMS-39), held online from October 7 (Wed) to 9 (Fri), 2020.

Topic: Epitaxial growth of four-inch AlGaN-based deep ultraviolet LEDs by using a large-scale mass production MOCVD tool

National Institute of Advanced Industrial Science and Technology (AIST) New Research Results "Accelerate the Spread of Highly Efficient Multi-junction Solar Cells" (Japanese only)

Source: National Institute of Advanced Industrial Science and Technology (AIST)

Information concerning the Taiyo Nippon Sanso CSE LTD group company has been updated.

CREST orders GaN MOCVD System for HB-LED from TNSC

National Institute of Advanced Industrial Science and Technology (AIST) New Research Results "Fabrication of low cost GaAs solar cells grown by HVPE" (Japanese only)

Source: National Institute of Advanced Industrial Science and Technology (AIST)

New Energy and Industrial Technology Development Organization (NEDO) entrusted TNSC with a part of the "Development of high performance and reliable PV modules to reduce levelized cost of energy"

Reference: Development of high performance and reliable PV modules to reduce levelized cost of energy (NEDO website, Japanese only)

Article about TNSC's MOCVD published in Compound Semiconductor magazine, Volume 22, Issue 3, April/May 2016
VENDOR VIEW Driving diversification in GaN device production (Page 22)

Sandia National Laboratories has qualified and accepted commercial MOCVD system SR-4000HT from MATHESON/Taiyo Nippon Sanso Corporation

UCSB SSLEEC selects TNSC's SR4000HT MOCVD reactor for deep ultra violet light emitting diode (UVCLED) development.

TAIYO NIPPON SANSO Corporation's MOCVD system was mentioned in THE GAS REVIEW No. 396 (November 26, 2014 issue) article about the Nobel Prize in Physics.

Taiyo Nippon Sanso installs GaN MOCVD system at Epistar Corp.

Sandia National Laboratories Orders Commercial Grade GaN-MOCVD System from Matheson/Taiyo Nippon Sanso

TNSC Announces Technical Agreement with ITRI
TNSC, a manufacturer of metal organic chemical vapor deposition (MOCVD) systems, has signed a technical agreement with Taiwan-based ITRI, which is known for its world-class technologies for optoelectronic devices. The objective of the agreement is to develop UVA LEDs on GaN substrates with TNSC AP (atmospheric pressure) MOCVD in order to demonstrate the potential of AP-MOCVD, which is a proprietary advanced technology of Taiyo Nippon Sanso. ITRI recognizes that the TNSC AP-MOCVD system has numerous advantages in growing UVA materials, including the high growth rate of low carbon GaN, high luminescence efficiency of low indium content InGaN and GaN, constant pressure and continuous growth of InGaN and AlGaN interface and high doping efficiency of AlGaN thanks to high quality. Potentially, ITRI and TNSC can develop a higher performance UVA LED on a native GaN substrate at a reasonable price than on a conventional sapphire substrate, because it can inject more current into an LED on a native GaN substrate due to low dislocation density and easy current spreading. The near-ideal point light source will improve the utilization efficiency of UV light with simple optics. ITRI and TNSC hope that the partnership will contribute to a new UVA LED technology standard as well as GaN on GaN application promotion.

ITRI and TNSC unite to enhance GaN LED growth — Compound Semiconductor

ITRI and TNSC Unite to Promote UVA LED Production on GaN Substrate — LEDinside

TNSC Signs Technical MOCVD Agreement With ITRI — LEDinside

Article about TNSC's MOCVD published in Compound Semiconductor magazine
Faster, better III-N film growth (Page 38) — Compound Semiconductor